WINBOND 25X10BVNIG

W25X10BV/20BV/40BV1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPIW25X10BV/20BV/40BV1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPIThe W25X10BV (1M-bit), W25X20BV (2M-bit) and the W25X40BV (4M-bit) Serial Flash memories provides a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving packages.The W25X10BV/20BV/40BV arrays are organized into 512/1,024/2,048 programmable pages of 256- bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (block erase) or the entire chip (chip erase). The W25X10BV/20BV/40BV has 32/64/128 erasable sectors and 2/4/8 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)The W25X10BV/20BV/40BV supports the standard Serial Peripheral Interface (SPI), and a high performance dual output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO (I/O1). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 and 16-bit Parallel Flash memories.A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control features, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification.