2659
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V
2N7002 – DMN601K7
Low On-Resistance Rds(on)Low Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output LeakageCase SOT23
389
RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @
39A126
MB39A126PFV Charging Power Controller IC
4141
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology
4168
VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V
4232
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs
4413
P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs
4422
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge.
4430
AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)<5.5mΩThe AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode
4435
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V
4456
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent