RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V
Additional information
Weight | 0.3 kg |
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Κατασκευαστής | OEM |