7692
FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30VID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID =
7832
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A
7836
IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ
7904
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2):
8 σε 1 Εξολκέας Βίδας
Ιδανικό για άνοιγμα νέων σπειρωμάτων.Περιεχόμενα:Wrench W1/16″-1/2″(M3-M12)M3x0.5M4x0.7M5x0.8M6x1.0M8x1.25M10x1.5M12x1.75DOA 14 ημερών
8119LN
OZ8119LNOZ811 is DC/DC controller for the next generation of microprocessor power supplies, their peripherals and chipsets. OZ811 steps down the
85T03GH
AP85T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-252 PackageVDS = 30VID = 75A @ VGS = 10V, RDS(on) = 6mΩThe TO-252
85U03GH
AP85U03GHN-Channel Enhancement Mode Power MOSFET. Package : TO-252(H) Type30V, 75AVDS=30VID=75A @ VGS=10V
8736
IRF8736 F8736IRF8736PbFHEXFET Power MOSFETVDS=30VID=18A @ VGS=10V
8878
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
8880
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of