4459A
Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS =
4466
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is
4468
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low
4488
N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology
4496
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device
4502
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and
4511
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A
4606
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
4704
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through
4710
VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) < 11.8mΩ (VGS = 10V)RDS(ON) < 14.2mΩ (VGS = 4.5V)SRFET TM The
4800
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
4807
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate