4800
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
4807
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
4810
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A
4812
30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
4825P
AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS =
4835B
4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V
4842
AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
4856
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω
4914
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID =
4924
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low
4925B
Dual P-Channel D-S modeVDS=-30VID=-7.1A @ VGS=-10VID=-5.5A @ VGS=-4.5V
4932
FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a