85T03GH
AP85T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-252 PackageVDS = 30VID = 75A @ VGS = 10V, RDS(on) = 6mΩThe TO-252
85U03GH
AP85U03GHN-Channel Enhancement Mode Power MOSFET. Package : TO-252(H) Type30V, 75AVDS=30VID=75A @ VGS=10V
4914
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID =
4825P
AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS =
7836
IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ
4232
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs
6675
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A
4430
AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)<5.5mΩThe AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode
4N60
4N60 Power MOSFET4A, 600V N-CHANNEL POWER MOSFETVDS = 600VID = 2.2A @ VGS = 10V, RDS(on) < 2.5ΩThe UTC 4N60
Si7904DN
Si7904DN 7904 Si7904 7904DNDual N-Channel 20-V (D-S) MOSFETPowerPack 1212-8 VDS=20VID=7.7A @ VGS=4.5VID=7.0A @ VGS=2.5VID=6.3A @ VGS=1.8V
9620S
FDMS9620S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ FDMS9620POWER 56 PackQ1 Switch: N-ChannelVDS=30VID=7.5A @ VGS=10VID=6.5A
2659
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V