4141
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology
4924
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low
4842
AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
4704
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through
8878
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
8736
IRF8736 F8736IRF8736PbFHEXFET Power MOSFETVDS=30VID=18A @ VGS=10V
7832
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A
4807
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
6676AS
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in
4810
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A
4456
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent
4422
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge.