4435
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V
4168
VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V
4932
FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a
4511
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A
4835B
4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V
4925B
Dual P-Channel D-S modeVDS=-30VID=-7.1A @ VGS=-10VID=-5.5A @ VGS=-4.5V
4856
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω
4488
N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology
4710
VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) < 11.8mΩ (VGS = 10V)RDS(ON) < 14.2mΩ (VGS = 4.5V)SRFET TM The
4935A
Dual 30V P-Channel PowerTrench MOSFET –7 A, –30 V4935A AO4935A RDS(ON) = 23 mΩ @ VGS = –10 VRDS(ON) = 35 mΩ
4413
P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs
Ανεμιστήρας Sony Vaio VPC-EH
4 PIN4 WIREΑνεμιστήρας Sony Vaio VPC-EH VPC-ELSVE17 SVE-17 SVE 17VPCEH VPCELDFS470805WL0T