4466
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is
6690
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in
8880
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of
7904
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2):
6900
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch
4800
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
8884
N-Channel PowerTrench MOSFET FDS8884VDS=30VID=8.5A @ VGS=10VID=7.5A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of
4502
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and
4606
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
4496
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device
4812
30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
4468
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low